ALD
Atomic Layer Deposition

Growth & Synthesis Installation 2
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ALD is similar to CVD except that the ALD reaction occurs at lower temperature and it is broken into two half-reactions, keeping the precursor materials separated during the reaction. The separation of the precursors is important to achieve a self-limiting surface reaction to enable precise thickness control and ensure uniform coatings and compactness even in complicated 3D structures.

ALD has a rich history in microelectronics. It is studied as a potential technique to deposit high-k (high permittivity) gate oxides, high-k memory capacitor dielectrics, ferroelectrics, and metals and nitrides for electrodes and interconnects. The motivation for high-k oxides comes from the problem of high tunneling currents through the currently used SiO2 MOSFET gate dielectric when it is downscaled to a thickness of 1,0 nm and below. With the high-k oxide, a thicker gate dielectric can be made for the required capacitance density, thus the tunneling current can be reduced through the structure.

Importantly, the number of materials that can be prepared by ALD has tremendously increased in the past decade and noble metals, ternary oxides, metal fluorides, nitrides, selenides and inorganic-organic hybrid materials are already introduced opening up new opportunities for numerous industrial applications.

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          provided at NFFA-Europe laboratories by:
France
Spain
Sweden
Switzerland
LU
Sweden

Picosun Sunale R-100  (608)

Thermal ALD of high k oxides

TDMAHf for hafnium oxides and TMAl for aluminium oxides

Deposition at 50-250° C

Deposited film thicknesses from 0.1-20nm

Up to 2” wafer

E-2 mbar range base pressure

LU
Sweden

ALD Savannah-100  

Thermal ALD of high k oxides

TDMAHf for hafnium oxides and TMAl for aluminium oxides

Deposition at 75-250° C

Deposited film thicknesses from 0.1-50nm

Up to 4” wafer

E-2 mbar range base pressure

LU
Sweden

ALD - Fiji

Thermal and Plasma ALD of oxides and titanium nitrides

TDMAHf for hafnium oxides and TMAl for aluminium oxides

TEMAZr for Zirconium oxides

BDEASi for Siicon oxides

TEMATi for titanium nitrides

Deposition at 50-400° C

Deposited film thicknesses from 0.1-100nm

Up to 8” wafer

E-2 mbar range base pressure

PSI
Switzerland

Picosun R200 ALD @ Laboratory for Micro- and Nanotechnology

Atomic Layer Deposition

Gas, liquid, solid, Ir-precursor, WF6, SiH4, Al-precursor, H2 and O2 (plasma source), H20 (+ Ar/N2 as inert gas)

H2/O2 plasma up to 2000W

Loadloack with sample transfer, manual placement in chamber

4" wafer size, solid samples only, should not be prone to O2 plasma

Coarse vacuum down to 1 mbar, N2/Ar atmosphere, temperatures up to ~370°C