ICP
Inductively Coupled Plasma

Lithography & Patterning Installation 1
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A time varying axial magnetic field induces an electric field which keeps the electrons in a circular orbit and increases the probability to excite another molecule. This way the plasma density can be increased without having to increase the DC bias. RF biasing can be used independently to increase or decrease the energy of the ions impinging on the specimen surface. Inductively-coupled plasma reactive-ion etching (ICP-RIE) can achieve high etch rates by high ion or radical densities, while high material selectivity and low surface damage is achieved by using low ion energies. High density plasmas created by ICP systems can operate at low pressures and can yield significantly improved profile control for very deep, anisotropic etches.

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          provided at NFFA-Europe laboratories by:
Italy
France
Spain
Switzerland
PSI
Switzerland

Oxford plasmalab Systems 100 @ Laboratory for Micro and Nanotechnology

RIE-ICP system dedicated to the Bosch process (Au-free)

RIE-ICP system for general purpose etches (F-based)

Typical gases C4F8, CF4, SF6, O2, Ar

Up to 4" wafers

High Vacuum, LN2 cooled stage

RIE

Relevant clean room tools, there is also a Cl-based plasma etching tool dedicated to Cr etching

CNR-IOM
Italy

STS MESC MULTIPLEX ICP @ Facility of Nano Fabrication

High frequency Inductively Coupled Plasma etch system for deep Si etching

Several BOSCH like processes implemented allowing high aspect ratio structures

Continuous mode for nanostructure fabrication

Operation Gas: O2, N2, Ar, SF6, C4F8

The plasma is inductively coupled at 13.56 MHz via a matching unit and coil assembly

Down to the 10-nm scale in lateral resolution and aspect ratios of up to 10

Sample: up to 5” wafers can be loaded, but small samples can be processed as well

Independent energy control is provided by biasing of the electrode (platen) via automatic power control and impedance matching