Processes involving exposure of (usually) semiconductors samples to oxidizing or inert ambient at high temperature (300- 1150C). For example, O2 or H2O ambient are used to grow silicon dioxide on Si. Inert ambient (N2, Ar) are used to densify layers or to activate and redistribute dopant impurities. N2/H2 is used for aluminum sintering.
This research project has received funding from the EU's H2020
framework programme for research and innovation under grant agreements NFFA-Europe (n.
654360 from 1/9/2015 to 28/02/2021) and NFFA-Europe-Pilot (n. 101007417 from 1/03/2021 to 28/02/2026)